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| N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX 240V RDS(ON) (max) 4.0 IDSS (min) 600mA Order Number / Package TO-92 DN2624N3 Die DN2624ND TE - OLE OBS - DN2624 Features High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. 8 Applications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSX BVDGX 20V -55C to +150C 300C SGD TO-92 Note: See Package Outline section for dimensions. 8-9 DN2624 Thermal Characteristics Package TO-92 ID (continuous)* 300mA ID (pulsed) 1.0A Power Dissipation @ TC = 25C 1.0W jc ja IDR* 300mA IDRM 1.0A C/W 125 C/W 170 LETE - OBSO - Electrical Characteristics * ID (continuous) is limited by max rated Tj. (@ 25C unless otherwise specified) Min 240 -1 -3 4.5 100 10 1 Typ Max Unit V V mV nA A mA mA 4.0 1.1 400 720 100 30 15 22 22 30 30 44 44 60 1.8 600 V ns ns pF %/C mhos Symbol BVDSX VGS(OFF) VGS(OFF) IGSS ID(OFF) Parameter Drain-to-Source Breakdown Voltage Gate-to-Source OFF Voltage Change in VGS(OFF) with Temperature Gate Body Leakage Current Drain-to-Source Leakage Current Conditions VGS = -5V, ID = 100A VDS = 25V, ID= 10A VDS = 25V, ID= 10A VGS = 20V, VDS = 0V VGS = -10V, VDS = Max Rating VGS = -10V, VDS = 0.8 Max Rating TA = 125C VGS = 0V, VDS = 25V VGS = 0V, ID = 200mA VGS = 0V, ID = 200mA ID = 300mA, VDS = 10V VGS = -10V, VDS = 25V f = 1 MHz IDSS RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Saturated Drain-to-Source Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 600 VDD = 25V, ID = 200mA, RGEN = 10 VGS = -10V, ISD = 200mA VGS = -10V, ISD = 1A Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V VDD 90% INPUT -10V RL PULSE GENERATOR Rgen OUTPUT 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 8-10 DN2624 Typical Performance Curves BVDSS Variation with Temperature 1.1 LETE - OBSO - 10 8 VGS = 0V On-Resistance vs. Drain Current BVDSS (normalized) VGS = -3.5V RDS(on) (ohms) -50 0 50 100 150 6 1.0 4 2 0.9 0 0 0.2 0.4 0.6 0.8 1.0 TJ (C) Transfer Characteristics 1.0 TA = -55C 0.8 VDS = 10V TA = 25C 0.6 TA = 125C 1.6 ID (amps) V(th) and RDS Variation with Temperature 2.0 RDS (ON) @ VGS = 0V, ID = 200mA 8 1.6 VGS(th) (normalized) ID (amperes) 1.4 1.2 1.2 0.8 1.0 VGS(OFF) @ VDS = 25V, ID = 10A 0.4 0.2 0.8 0 -3 -2 -1 0 1 2 -50 0 0.4 0 50 100 150 VGS (Volts) Capacitance Vs. Drain-to-Source Voltage 800 VGS = -10V CISS 600 2 4 Tj (C) Gate Drive Dynamic Characteristics C (picofarads) VGS (volts) 0 VDS = 25V ID = 30mA 700pF 400 -2 200 -4 COSS CRSS 0 0 10 20 30 40 -6 0 1 2 3 4 5 620pf VDS (Volts) QC (Nanocoulombs) 8-11 RDS(ON) (normalized) DN2624 Typical Performance Curves Output Characteristics 2.0 LETE - OBSO - 2.0 1.6 Saturation Characteristics 1.6 VGS = 1.0V VGS = 1.0V ID (amperes) 1.2 ID (amperes) 0.5V 1.2 0.5V 0.8 0V 0.8 0V 0.4 -0.5V -1.0V 0.4 -0.5V -1.0V 0 0 10 20 30 40 50 0 0 2 4 6 8 10 VDS (volts) Transconductance vs. Drain Current 2.0 1.0 VDS (volts) Power Dissipation vs. Temperature VDS = 10V 1.6 TA = -55C 0.8 TO-92 GFS (siemens) TA = 25C TA = 125C 0.8 PD (watts) 1.0 1.2 0.6 0.4 0.4 0.2 0 0 0.2 0.4 0.6 0.8 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 1.0 TO-92 (pulsed) 1.0 TA(C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 ID (amperes) 0.1 0.6 TO-92 (DC) 0.4 0.01 0.2 0.001 1 TA = 25C 10 100 1000 TO-92 PD = 1.0W TA = 25C 0.001 0.01 0.1 1 10 0 VDS (volts) tp (seconds) 8-12 |
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